The Ultrafast Spectroscopy and Analysis of Semiconductors Team at the U.S. Army Research Laboratory in Adelphi, MD, in the greater Washington D.C. metro area, has an opening for a postdoctoral research scientist in the fields of ultrafast-laser optical spectroscopy, and solid state and semiconductor physics. Emphasis is placed on understanding material properties that will lead to new and improved devices for applications, including light modulators, high-power optical switches, optical waveguides, light emitters and lasers, and detectors. Applicants should have a demonstrated background and interest in the study of electron and phonon processes in emerging materials through light-matter interaction. Experience in nonlinear optics and optoelectronic device physics is a plus. This position is for an experimentalist.
Current Research Programs Include:
Carrier dynamics and transport in heterostructures and optoelectronic devices
Carrier dynamics, transport, and lifetime in electronic and photonic materials and device structures, including III-V materials comprised of mixed group V bulk (N, As, Sb) alloys and IR superlattices, III-Nitride ternary heterostructures and UV optoelectronic devices, van der Waals heterostructures, and topological materials are studied using time-resolved photoluminescence (TRPL) – including time-correlated single photon counting (TCSPC) and optical gating in a nonlinear crystal – and pump-probe techniques.
THz optics and spectroscopy
Pump-probe techniques using THz pump and/or probe pulses are used to perform time-resolved spectroscopy of free carrier dynamics in semiconductor materials, which provides information on internal electric fields, and carrier dynamics/transport.
Plasmonic-enhanced light-mater interactions
Spatial and temporal coherence properties are studied in plasmonic nanoparticle laser systems using interferometric-type measurements in both real and momentum space. Charge transfer dynamics in upconversion quantum dot and metallic nanoparticle systems are studied using pump-probe techniques for applications of plasmon lasers, and THz and IR signal upconversion.
Coherent optical control in wide band gap semiconductors.
Coherent quantum effects in the optical spectra of wide band gap materials are studied and the feasibility of fast optical control of quantum states in GaN and ZnO heterostructures is examined through TRPL, and pump-probe and other four-wave mixing techniques. Dephasing processes such as carrier-carrier and carrier-phonon scattering are addressed.
Employment will be located at the Army Research Laboratory on a US Department of Defense (DoD) facility. Security restrictions apply that preclude non-US citizens from meaningful participation in these efforts – U.S. Citizenship is strongly desired.
Additional Salary Information: Additionally, the cost of health insurance and a travel stipend are provided.
The United States Army Research Laboratory fosters scientific creativity in a wide range of scientific disciplines. Scientists at ARL have access to multiple avenues of development in both their research and career goals. The sense of satisfaction of knowing that their work can make a difference to Soldiers every day spurs discovery among the nearly 1,300 scientists and engineers working in ARL's world-class facilities.