We are seeking an experienced staff member to join a dynamic, multidisciplinary team. Are you passionate about research related to novel nanoelectronic devices for both nanoscale and quantum applications? Do you dream of conducting a variety of research utilizing state-of-the-art technologies in best-in-class labs? If so, you will want to apply for this opportunity. This job is based around using focused ion beam implantation to create and characterize down to single atom devices in wide bandgap materials, silicon MOSFET structures and III-V devices. Ongoing projects include: diamond defect center formation (NV, SiV, GeV, etc.) for quantum sensing, single photon sources and distributed quantum information processing; exploring novel defect center device formation in 2D and ultra-wide bandgap materials including hBN, GaN, SiC, etc.; and deterministic seeding of the conductive filaments in TaOx memristive memories.
This job covers both nanofabrication and radiation effects testing in cutting edge materials and devices using a range of focused ion beam implantation capabilities from a 100 kV mass separated focused ion beam system to series of high energy microbeams with 150 nm to 1 mm resolution. Additionally, you will partner with a multidisciplinary team including internal and external collaborators through close connections to the Center for Integrated Technology (CINT) at Sandia and Los Alamos.
On any given day, you may be called on to:
Develop and use a unique nanoimplantation system which allows for direct writing of nm-scale devices using a range of ion species and energies capable of fabricating single atom devices with 10’s nm resolution
Measure single atom devices made in house using a confocal photoluminescence setup for optical characterization and a low temperature probe station for electrical characterization
Develop and use a range of high energy microbeams for either direct writing of nanostructures or for high resolution radiation effects testing with resolutions from 150 nm to 1 mm
Mapping of ion beam induced charge (IBIC) collection using single ion irradiations to probe single event upsets (SEU) in modern CMOS nodes
Enhancing the direct write lithography capability of the microbeam systems enabling high resolution device formation with accurate alignment to existing nanostructures
Work as part of a multidisciplinary team focused on making great strides in the quantum world with multiple high impact publications (2 Science and 2 Nature Communication papers in the last 2 years) and multiple R&D100 awards for innovative solutions for radiation effects testing
Contribute to publication and presentation of results
Some travel required
Sandia Job Title: R&D Physics
The Radiation-Solid Interaction Department operates the Ion Beam Laboratory (IBL), which has been a key player in understanding radiation effects in microelectronics since the 1950’s and more recently understanding the materials science of defects in solids. These efforts continue to this day with development of in situ surrogate testing capabilities which enable experimentation to determine the early-time response of microelectronic devices to neutron and gamma environments. This experimental data, coupled with fundamental physics-based defect and carrier models, allows us to predict the radiation response of devices and circuits. These state-of-the-art capabilities allow us to explore the fundamental materials science of novel defects in solids down to the fabrication of single atom devices.
Over the last decade, Sandia has improved the understanding of silicon and III-V materials. In the coming years, we need to apply our experiment and modeling expertise to the next generation of radiation-hardened CMOS technologies, maturing materials such as III-nitrides, as well as rapidly emerging materials (e.g. gallium oxide). We offer unique experimental and modeling capabilities, a broad range of technologies of interest, and a diverse, multi-disciplinary team.
Recently, Sandia has directly improved the field of solid state defect centers and single atom doping by enabling the deterministic creation of single atom devices within nanostructures including optical cavities for enhanced photon coupling in wide bandgap materials and electrical structures for low temperature quantum transport studies in Si MOSFET devices.
Our state-of-the-art facility houses 4 major accelerators: a 6 MV Tandem, a 3 MV Pelletron, a 400 kV implanter, and a unique 100 kV nanoImplanter with a 10 nm spot size. Other experimental facilities include micro beam lines on all the major accelerators with spots sizes from 150 nm to 1 um for localized irradiations. Electrical characterization of ion beam induced damage including in-situ deep level transient spectroscopy for defect spectroscopy, in-situ photoluminescence and transient microwave reflectance setups to measure minority carrier lifetimes and a unique mixed radiation environment simulator combining ion and electron irradiations simulating both displacement damage and high dose rate conditions. Optical characterization of light emission from optically active defect centers in diamond, GaN, SiC, etc. using photoluminescence and electroluminescence.
The IBL is actively engaged in three major research thrusts:
Understanding the performance of materials in radiation environments. Among these projects we directly impact the performance of microelectronics in space and other hostile environments.
Developing and applying novel ion beam techniques to precisely measure materials compositions. Applications in this area include mapping hydrogen isotopes in fusion wall material and measuring the composition of thin complex materials such as transition metal oxides.
Exploring the materials science of defects in solids. This broad area includes single ion implants for quantum applications in wide bandgap materials, anomalous grain growth in nanograined materials, hydride formation under irradiation, and nanomechanical responses of materials.
In each thrust the department provides exceptional capabilities to multidisciplinary teams with an interest in publishing high quality research and applying the results to problems of national interest
Sandia National Laboratories is the nation’s premier science and engineering lab for national security and technology innovation, with teams of specialists focused on cutting-edge work in a broad array of areas. Some of the main reasons we love our jobs:
Challenging work with amazing impact that contributes to security, peace, and freedom worldwide
Some of the best tools, equipment, and research facilities in the world
Career advancement and enrichment opportunities
Flexible schedules, generous vacations, strong medical and other benefits, competitive 401k, learning opportunities, relocation assistance and amenities aimed at creating a solid work/life balance*
World-changing technologies. Life-changing careers. Learn more about Sandia at: http://www.sandia.gov
*These benefits vary by job classification.
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, disability, or veteran status.
PhD in experimental physics, electrical engineering, semiconductor material science, or related area
Bachelor's degree in a science, technology, engineering or mathematics (STEM) discipline.
Experience with semiconductor devices and materials, preferably with an emphasis on defect centers in wide bandgap materials and their optical and electrical properties
Good communication skills as evidenced by a history of publication of results in peer-reviewed journals and external presentations at appropriate scientific conferences
Able to obtain and maintain a DOE Q-level security clearance
Experience with experimental semiconductor device physics including electrical measurements, and expertise in the study of radiation effects in electronics
Experience with keV to MeV energy ion beam accelerators and electron beam systems
Experience with advanced sample fabrications including electron beam lithography, focused ion beam lithography (and/or patterning)
Position requires a Department of Energy (DOE) Q-level security clearance.
Sandia is required by DOE to conduct a pre-employment drug test and background review that includes checks of personal references, credit, law enforcement records, and employment/education verifications. Applicants for employment must be able to obtain and maintain a DOE Q-level security clearance, which requires U.S. citizenship. If you hold more than one citizenship (i.e., of the U.S. and another country), your ability to obtain a security clearance may be impacted.
Applicants offered employment with Sandia are subject to a federal background investigation to meet the requirements for access to classified information or matter if the duties of the position require a DOE security clearance. Substance abuse or illegal drug use, falsification of information, criminal activity, serious misconduct or other indicators of untrustworthiness can cause a clearance to be denied or terminated by DOE, resulting in the inability to perform the duties assigned and subsequent termination of employment.
Internal Number: 665377
About Sandia National Laboratories
Sandia National Laboratories is the nation's premier science and engineering lab for national security and technology innovation with major facilities in Albuquerque, New Mexico and Livermore, California. We are a world-class team of scientists, engineers, technologists, post docs, and visiting researchers all focused on cutting-edge technology, ranging from homeland defense, global security, biotechnology, and environmental preservation to energy and combustion research, computer security, and nuclear defense. To learn more, please visit our website at www.sandia.gov. We are searching for a Manager for the Semiconductor Device Sciences Department for the Albuquerque facility. Must be able to obtain and maintain a DOE Security Clearance.